Infineon IPG20N10S4L-35: High-Performance 100V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPG20N10S4L-35, a 100V N-channel power MOSFET from Infineon’s esteemed OptiMOS™ family, stands out as a superior solution engineered to meet these demanding requirements. This device is specifically designed for high-performance switching applications, offering an exceptional balance of low on-state resistance and high current handling capability.

A key highlight of the IPG20N10S4L-35 is its extremely low typical on-state resistance (RDS(on)) of just 3.5 mΩ at 10 V. This remarkably low value is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in applications such as DC-DC converters, motor drives, and power supplies. The low RDS(on) ensures that the MOSFET operates cooler, enhancing overall system reliability and potentially allowing for more compact designs by reducing the need for extensive heat sinking.

Packaged in the robust and space-efficient Infineon’s proprietary SuperSO8 (PG-TDSON-8) package, this MOSFET is ideal for modern, high-density circuit boards. The package offers an excellent power-to-footprint ratio and features an exposed die pad that significantly improves thermal dissipation by enabling efficient heat transfer to the PCB. This makes the component exceptionally suited for automotive, industrial, and computing applications where both performance and space are at a premium.

Furthermore, the device is characterized by its high switching speed and optimized gate charge (Qg), which contribute to reduced switching losses. This is particularly beneficial in high-frequency circuits, allowing for faster switching frequencies that can lead to the use of smaller passive components like inductors and capacitors. The combination of low gate charge and low RDS(on) provides designers with a highly efficient switch that improves the overall performance of their power conversion systems.

The IPG20N10S4L-35 also boasts enhanced avalanche ruggedness and a high body diode dv/dt capability, ensuring robust operation in harsh environments and under stressful conditions like inductive load switching. This inherent robustness makes it a dependable choice for automotive systems, including electric power steering (EPS), braking systems, and other safety-critical applications.

ICGOO FIND: The Infineon IPG20N10S4L-35 is a top-tier 100V OptiMOS power MOSFET that delivers outstanding efficiency, thermal performance, and power density. Its industry-leading low RDS(on) and superior switching characteristics make it an excellent component for designers aiming to push the boundaries of performance in power management applications.

Keywords:

Power MOSFET

Low RDS(on)

OptiMOS

SuperSO8

High Efficiency