Infineon IPB039N10N3G: 100V OptiMOS 3 Power MOSFET for High-Efficiency Power Conversion

Release date:2025-11-05 Number of clicks:188

Infineon IPB039N10N3G: 100V OptiMOS 3 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, the Infineon IPB039N10N3G stands out as a high-performance 100V N-channel Power MOSFET built on the advanced OptiMOS 3 technology platform. This device is engineered to deliver exceptional efficiency and reliability in a broad spectrum of power conversion applications.

A key metric for any power MOSFET is its on-state resistance, RDS(on). The IPB039N10N3G boasts an impressively low maximum RDS(on) of just 3.9 mΩ at 10 V, significantly reducing conduction losses. This characteristic is paramount in applications where high continuous currents are present, as it minimizes power dissipation, leading to cooler operation and higher overall system efficiency. The low gate charge (Qg) of the device further enhances its performance by enabling very fast switching speeds, which drastically cuts switching losses—a critical factor in high-frequency switch-mode power supplies (SMPS).

The 100V voltage rating makes this MOSFET an ideal candidate for a wide array of uses. It is exceptionally well-suited for primary side switching in industrial SMPS, telecom and server power units, and DC-DC converters. Furthermore, its robust design and high efficiency make it a perfect fit for motor control and drives in professional power tools, robotics, and forklifts, as well as for synchronous rectification in the secondary side of power supplies.

Housed in the space-saving Infineon PG-TDSON-8 package, the component offers an excellent footprint-to-performance ratio. This package not only saves valuable PCB real estate but also features a low-profile design that improves thermal performance by facilitating better heat dissipation away from the die.

ICGOOODFIND: The Infineon IPB039N10N3G is a superior 100V power MOSFET that combines extremely low conduction and switching losses with a thermally efficient package. It is a top-tier solution for designers aiming to push the boundaries of efficiency and power density in demanding power conversion systems.

Keywords: Low RDS(on), OptiMOS 3, High-Efficiency, Power Conversion, Synchronous Rectification.

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