Infineon IPD80N04S3-06: High-Performance 80V N-Channel Power MOSFET

The relentless pursuit of efficiency and power density in modern electronic systems demands semiconductor components that deliver uncompromising performance. The Infineon IPD80N04S3-06 stands out as a premier solution, an 80V N-Channel power MOSFET engineered to meet these rigorous challenges. Designed with Infineon's advanced OptiMOS™ technology, this transistor is a cornerstone for power management applications requiring high efficiency, robust reliability, and superior thermal performance.

A key strength of the IPD80N04S3-06 lies in its exceptionally low on-state resistance (RDS(on)) of just 3.0 mΩ (max. at VGS = 10 V). This minimal resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact designs. Whether deployed in high-current switch-mode power supplies (SMPS), motor control circuits, or DC-DC converters, this low RDS(on) ensures that more power is delivered to the load and less is wasted as heat.

Beyond its static performance, the device is optimized for superior switching characteristics. The low gate charge (Qg) and figure-of-merit (FOM) facilitate fast switching transitions, which are essential for high-frequency operation. This allows designers to increase the switching frequency of their power topologies, thereby reducing the size and cost of passive components like inductors and transformers. The MOSFET's avalanche ruggedness ensures it can handle unexpected voltage spikes and stressful inductive switching events, enhancing the overall robustness and longevity of the end application.

The IPD80N04S3-06 is housed in a D2PAK (TO-263) package, which offers an excellent balance between compact footprint and superior thermal performance. This package is renowned for its low thermal resistance, enabling efficient heat dissipation away from the silicon die. This inherent thermal advantage allows the MOSFET to operate reliably at high power levels and in demanding environmental conditions, making it an ideal choice for automotive, industrial, and computing applications.

ICGOODFIND: The Infineon IPD80N04S3-06 is a high-performance power MOSFET that sets a benchmark for efficiency and reliability. Its industry-leading low RDS(on), excellent switching performance, and robust package make it an indispensable component for designers aiming to push the boundaries of power density and energy efficiency in their next-generation systems.

Keywords: Power MOSFET, Low RDS(on), OptiMOS™ Technology, High Efficiency, D2PAK Package.