Infineon BSZ900N15NS3G: 100V OptiMOS 5 Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon BSZ900N15NS3G stands out as a premier 100V N-channel Power MOSFET built on Infineon's advanced OptiMOS™ 5 technology. This device is engineered to deliver exceptional performance in a compact footprint, making it an ideal solution for a wide array of demanding switching applications.

A cornerstone of this MOSFET's performance is its extremely low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 1.8 mΩ at 10 V, it minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. Simultaneously, its optimized gate charge (Q G) ensures swift switching transitions, which is critical for operating at higher frequencies. This reduction in both switching and conduction losses directly translates to cooler running systems and higher overall efficiency, a vital requirement for applications like server power supplies and telecom infrastructure.

The device is housed in a SuperSO8 package, which offers a superior thermal performance and power density compared to standard SO-8 packages. This robust packaging enables designers to achieve more power in a smaller space or to push existing designs to higher performance levels without increasing the board area. Furthermore, the BSZ900N15NS3G boasts excellent ruggedness and reliability, characterized by a high maximum drain current (I D) of 900 A (pulsed) and an avalanche energy rating that ensures robustness under stressful operating conditions, such as inductive load switching.

Typical applications that benefit from its capabilities include:

High-Efficiency DC-DC Converters in computing and data centers.

Motor Control Drives for industrial automation and robotics.

Synchronous Rectification in switch-mode power supplies (SMPS).

Battery Management Systems (BMS) and protection circuits.

ICGOOODFIND: The Infineon BSZ900N15NS3G is a top-tier 100V MOSFET that masterfully balances ultra-low on-resistance with fast switching characteristics. Its implementation of OptiMOS™ 5 technology and SuperSO8 packaging makes it a superior choice for engineers aiming to maximize efficiency and power density in their next-generation high-performance designs.

Keywords: OptiMOS™ 5, Low R DS(on), High-Efficiency Switching, SuperSO8, Power Density.