Infineon IPD50N04S4-10: Key Features and Application Circuit Design
The Infineon IPD50N04S4-10 is a state-of-the-art N-channel power MOSFET engineered in OptiMOS™ technology, representing a significant advancement in power management solutions. It is specifically designed for high-efficiency, high-frequency switching applications, making it an ideal choice for modern automotive systems, industrial motor drives, and switched-mode power supplies (SMPS).
A primary feature of this MOSFET is its exceptionally low on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Furthermore, the device is characterized by its high continuous drain current (ID) rating of 50 A, allowing it to handle significant power in a compact package (TOLL - 8x8). Its low gate charge (QG) ensures fast switching transitions, which is paramount for reducing switching losses in high-frequency circuits.
The device is also AEC-Q101 qualified, guaranteeing its reliability and performance under the stringent conditions required for automotive applications. Its avalanche ruggedness and 100% repetitive avalanche tested design ensure robust operation in harsh environments where voltage spikes are common.
Application Circuit Design: A Synchronous Buck Converter Example
A classic application for the IPD50N04S4-10 is in the critical high-side switch position of a synchronous buck converter, a common topology for point-of-load (POL) voltage regulation.
The core circuit consists of a PWM controller, a high-side switch (Q1, using the IPD50N04S4-10), a low-side switch (typically another MOSFET), an inductor (L), and output capacitors (C_OUT).
Key Design Considerations:
1. Gate Driving: To achieve the promised low RDS(on), a sufficient gate drive voltage is essential. A dedicated gate driver IC must be used to provide the necessary current to charge and discharge the MOSFET's input capacitance quickly. The recommended gate-source voltage (VGS) is 10 V. The driver should be placed as close as possible to the MOSFET gate to minimize parasitic inductance in the gate loop.
2. PCB Layout: For high-frequency switching, PCB layout is paramount. The design must feature:
A small, tight loop for the power switching path (from input capacitor, through Q1 and the inductor, to the output capacitor). This minimizes parasitic inductance, which can cause voltage spikes and electromagnetic interference (EMI).
A separate, low-inductance path for the gate drive signals.
Adequate copper area for heat sinking. The Drain Tab of the TOLL package must be soldered to a large copper plane to act as a heatsink, dissipating the generated thermal energy effectively.
3. Protection: While the MOSFET is avalanche rugged, incorporating additional protection such as a TVS diode or snubber circuit across the drain and source can further enhance system reliability by clamping voltage transients from inductive loads.
By leveraging the low RDS(on) and fast switching capability of the IPD50N04S4-10, designers can create highly efficient, compact, and reliable power conversion systems that meet the demanding requirements of today's automotive and industrial markets.
ICGOODFIND: The Infineon IPD50N04S4-10 stands out as a superior component for power designers seeking to maximize efficiency and power density. Its optimal blend of ultra-low conduction loss, high current handling, and automotive-grade robustness makes it an excellent foundation for building next-generation power electronics.
Keywords: Power MOSFET, Low RDS(on), Automotive Grade (AEC-Q101), Synchronous Buck Converter, High Efficiency.
