Infineon IPD038N06N3G: A High-Performance 60 V OptiMOS Power MOSFET
The demand for highly efficient and reliable power switching solutions continues to grow across industries such as automotive, industrial automation, and consumer electronics. Addressing this need, Infineon Technologies introduces the IPD038N06N3G, a member of its renowned OptiMOS™ power MOSFET family. This device stands out as a high-performance 60 V N-channel MOSFET engineered to deliver exceptional efficiency, robustness, and power density in a wide range of applications.
A key highlight of the IPD038N06N3G is its extremely low typical on-state resistance (RDS(on)) of just 3.8 mΩ. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. By operating cooler, the MOSFET enables more compact designs by reducing the need for large heat sinks, thereby saving valuable space and lowering the overall system cost.
Furthermore, this MOSFET is optimized for fast switching performance. The low gate charge (Qg) and figure of merit (FOM) ensure swift turn-on and turn-off transitions, which are essential for high-frequency switching power supplies, motor control circuits, and DC-DC converters. The reduced switching losses allow systems to operate at higher frequencies, leading to further miniaturization of passive components like inductors and capacitors.
The IPD038N06N3G is housed in a space-efficient, robust SuperSO8 package, which offers an excellent power-to-size ratio. This package not only enhances thermal performance but also improves power cycling capability, making it an ideal choice for demanding environments. Its AEC-Q101 qualification confirms its suitability for automotive applications, including electric power steering (EPS), braking systems, and other 12 V/24 V board net applications where reliability is paramount.
In addition to automotive uses, this MOSFET excels in industrial power tools, battery management systems (BMS), and synchronous rectification stages in switch-mode power supplies (SMPS). Its combination of low RDS(on), high switching speed, and strong thermal characteristics ensures robust operation under strenuous conditions.
ICGOODFIND: The Infineon IPD038N06N3G OptiMOS™ power MOSFET sets a high standard with its industry-leading low on-resistance, superior switching characteristics, and proven reliability, making it a top-tier choice for designers aiming to push the boundaries of power efficiency and density.
Keywords: Power MOSFET, Low RDS(on), High Efficiency, Fast Switching, AEC-Q101 Qualified.
