**HMC3653LP3BE: A 24 GHz GaAs MMIC Medium Power Amplifier for Advanced RF Applications**

The relentless drive for higher data rates and enhanced connectivity in modern wireless systems has intensified the demand for high-performance radio frequency (RF) components operating in the millimeter-wave (mmWave) spectrum. The **HMC3653LP3BE**, a 24 GHz GaAs MMIC (Monolithic Microwave Integrated Circuit) medium power amplifier, stands out as a critical solution engineered to meet the rigorous requirements of next-generation applications, from point-to-point radio and SATCOM to advanced sensor systems.

Fabricated on a advanced Gallium Arsenide (GaAs) substrate, the HMC3653LP3BE is inherently designed for high-frequency operation. GaAs technology provides superior electron mobility compared to silicon, enabling excellent efficiency and noise performance at microwave and mmWave frequencies. This MMIC amplifier delivers a compelling combination of **high linear output power** and exceptional gain, making it an ideal driver stage for transmitter chains or a final power amplifier in less demanding link budgets.

A key performance metric for any power amplifier is its gain and power handling capability. The HMC3653LP3BE typically provides a small-signal gain of **27 dB**, significantly boosting input signals with minimal added noise. Furthermore, it achieves a saturated output power (**Psat**) of **+27 dBm**, with a corresponding output third-order intercept point (**OIP3**) of **+38 dBm**. This high OIP3 is particularly crucial for complex modulation schemes (e.g., 256-QAM, 1024-QAM) used in 5G backhaul and other high-throughput systems, as it ensures superior linearity and minimizes signal distortion, thereby preserving data integrity.

The amplifier is housed in a compact, low-profile **3x3 mm LP3 leadless package**, which is compatible with high-volume surface-mount technology (SMT) assembly processes. This allows for robust and reliable PCB mounting, essential for space-constrained commercial and aerospace applications. The device also incorporates on-chip bias networks, simplifying external circuit design by only requiring a single positive supply voltage and a few external bias components for stable operation.

Operating across a wide bandwidth from 23 to 25 GHz, the HMC3653LP3BE offers designers flexibility for various Ka-band applications. Its robust performance, integrated design, and package reliability make it a cornerstone component for engineers developing **advanced 24 GHz RF systems** that demand a balance of power, gain, and efficiency.

**ICGOOODFIND:** The HMC3653LP3BE is a high-performance GaAs MMIC amplifier that provides an optimal blend of high gain, strong linear output power, and excellent linearity in a miniaturized surface-mount package, making it an indispensable component for cutting-edge 24 GHz wireless infrastructure and sensing solutions.

**Keywords:** GaAs MMIC, 24 GHz, Medium Power Amplifier, High Linearity, Surface-Mount Package.