Infineon IRFHS9301TRPBF: High-Performance Power MOSFET for Automotive and Industrial Applications

Release date:2025-11-10 Number of clicks:83

Infineon IRFHS9301TRPBF: High-Performance Power MOSFET for Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in electronic systems places immense demands on power switching components. At the forefront of meeting these challenges is the Infineon IRFHS9301TRPBF, a state-of-the-art N-channel power MOSFET engineered to excel in the most demanding automotive and industrial environments.

This MOSFET is built upon Infineon's advanced OptiMOS™ technology platform, a hallmark of performance in the power semiconductor industry. The core of its superiority lies in its exceptionally low typical on-state resistance (R DS(on)) of just 1.8 mΩ. This minimal resistance is a critical figure of merit, as it directly translates to reduced conduction losses. In practical terms, this means the device dissipates less power as heat during operation, leading to significantly higher overall system efficiency and reduced thermal management requirements. This characteristic is paramount for battery-operated systems where every watt saved extends operational life, and for high-current applications where thermal design is a major constraint.

Beyond raw efficiency, the IRFHS9301TRPBF is designed for ruggedness and durability. It features an integrated Schottky diode within the same package. This integration offers substantial benefits by providing an optimized intrinsic body diode with improved reverse recovery characteristics. This not only enhances switching performance but also increases the robustness of the solution against voltage spikes and other transient events, a common occurrence in automotive electrical systems.

The device is offered in the space-saving PQFN 3.3x3.3 mm package, which is ideal for modern, compact PCB designs. Despite its small footprint, it is capable of handling a continuous drain current (I_D) of 100 A and boasts a high 175°C maximum operating junction temperature. This combination of high current capability, high-temperature operation, and a small form factor makes it a perfect fit for a wide array of applications. Key uses include:

Automotive: DC-DC converters, motor control systems (e.g., for pumps, fans, window lifters), and advanced driver-assistance systems (ADAS).

Industrial: High-frequency switch-mode power supplies (SMPS), battery management systems (BMS), and robust load switching.

ICGOOODFIND: The Infineon IRFHS9301TRPBF stands out as a superior power MOSFET that masterfully balances ultra-low conduction losses, high switching performance, and exceptional robustness. Its optimized design, leveraging the proven OptiMOS™ technology, makes it an ideal and highly reliable choice for engineers designing next-generation power electronics where efficiency, power density, and reliability are non-negotiable.

Keywords: OptiMOS™ Technology, Low R DS(on), High Efficiency, Automotive Grade, Integrated Schottky Diode.

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