Infineon IPD122N10N3G: High-Performance 100V N-Channel Power MOSFET for Advanced Automotive and Industrial Applications
The relentless drive towards greater efficiency, reliability, and power density in automotive and industrial systems demands semiconductor components that excel under the most demanding conditions. The Infineon IPD122N10N3G stands out as a premier 100V N-channel power MOSFET engineered specifically to meet these challenges. This device is a testament to Infineon's leadership in power semiconductor technology, offering a blend of ultra-low on-state resistance (RDS(on)) and exceptional switching performance that is critical for modern high-power applications.
At the heart of the IPD122N10N3G's performance is its advanced OptiMOS™ technology. This technology platform is renowned for achieving an optimal balance between conduction and switching losses. With a maximum RDS(on) of just 1.2 mΩ, this MOSFET minimizes conduction losses, leading to significantly higher efficiency and reduced heat generation. This is particularly vital in applications like electric power steering (EPS), braking systems, and DC-DC converters in vehicles, where every percentage point of efficiency translates into extended range and improved performance.
Beyond raw efficiency, the device is ruggedized for the harsh environments it is designed to operate in. It boasts an avalanche ruggedness and an extended operating temperature range, ensuring unwavering reliability in both the scorching heat of an engine bay and the frigid conditions of an industrial setting. Furthermore, its 100% repetitive avalanche tested qualification provides designers with the confidence needed for safety-critical systems. The AEC-Q101 qualification is a clear indicator of its suitability for automotive applications, guaranteeing that it meets the stringent quality and reliability standards demanded by the industry.
The benefits extend into industrial domains as well. In power supplies, motor drives, and solar inverters, the IPD122N10N3G's fast switching capabilities allow for higher frequency operation. This enables the design of smaller, lighter, and more compact systems by reducing the size of passive components like inductors and capacitors. Its robust TOLL (TO-leadless) package offers an excellent power-to-footprint ratio and superior thermal performance, thanks to an exposed top side that facilitates efficient heat sinking.
ICGOOODFIND: The Infineon IPD122N10N3G is a top-tier 100V MOSFET that sets a high benchmark for performance and reliability. Its exceptional combination of ultra-low RDS(on), robust switching characteristics, and automotive-grade ruggedness makes it an ideal and future-proof choice for designers pushing the boundaries of efficiency and power density in next-generation automotive and industrial platforms.
Keywords: OptiMOS™ Technology, Ultra-low RDS(on), AEC-Q101 Qualified, Avalanche Ruggedness, High Power Density.
