Infineon IKW30N65H5: A High-Performance 650V IGBT for Power Switching Applications
In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IKW30N65H5 stands out as a robust 650V IGBT (Insulated Gate Bipolar Transistor) engineered specifically to meet these demanding requirements in power switching applications. This device exemplifies the advanced trench and field-stop technology, delivering an optimal balance between low saturation voltage and minimal switching losses.
A key strength of the IKW30N65H5 lies in its low VCE(sat) of 1.55V at nominal current, which directly translates to reduced conduction losses. This is particularly beneficial in circuits operating at high frequencies, where energy efficiency is critical. Furthermore, the IGBT features a positive temperature coefficient, which simplifies the paralleling of devices for higher power designs, ensuring stable current sharing and enhanced system reliability.

The device is housed in the industry-standard TO-247 package, renowned for its excellent thermal characteristics. This allows the IKW30N65H5 to handle a high continuous collector current of 47A and manage significant power dissipation, making it suitable for harsh operating environments. Its fast switching capability minimizes turn-off losses, which is crucial for high-frequency inverters, industrial motor drives, and uninterruptible power supplies (UPS).
Another notable feature is the integrated ultra-soft recovery anti-parallel diode. This co-packaged diode not only saves board space but also improves the overall system's efficiency by reducing reverse recovery losses and mitigating electromagnetic interference (EMI).
ICGOOODFIND: The Infineon IKW30N65H5 is a superior 650V IGBT that offers an exceptional blend of low conduction loss, fast switching speed, and robust thermal performance. It is an ideal solution for designers seeking to enhance efficiency and power density in high-performance switching applications such as solar inverters, welding equipment, and industrial power supplies.
Keywords: IGBT, Low Saturation Voltage, Fast Switching, TO-247, Power Density.
